Copper seed layer etching
- Chemicals for pattern formation with semi-additive process <SAP>
- Chemicals for pattern formation with modified semi-additive process <M-SAP>
- Chemicals for palladium catalyst residue removal
Here is a H2SO4-H2O2 type etching solution for copper seed layer that can minimize undercut and the reduction in line width, creating the desired pattern formation. It is available as a copper seed layer remover for SAP process.
MECBRITE
QE-7300
This H2SO4-H2O2 type quick etching solution is suitable for copper seed layer etching in SAP to form fine patterns.
Features of MECBRITE QE-7300
- Minimizes reduction in line width.
- Can obtain desired patterns with minimal undercut.
- Its etching rate can be adjusted according to the desired productivity because it is an additive type.
Examples of pattern formation
25 μm pitch
Seed layer: electroless copper 1 μm
Here is a H2SO4-H2O2 type etching solution for copper seed layer that can minimize undercut and the reduction in line width, creating the desired pattern formation. It is available as a copper seed layer remover for M-SAP process.
MECBRITE
CI-7200
This H2SO4-H2O2 type etching solution is suitable for copper seed layer etching in M-SAP to form fine patterns.
Features of MECBRITE CI-7200
- Can obtain desired patterns with minimal undercut.
- Minimizes reduction in line width because of its excellent etching performance on copper foil.
- Available as a copper seed layer remover for SAP and M-SAP.
- Its etching rate can be adjusted according to the desired productivity because it is an additive type.
Treatment steps
Examples of pattern formation
50 μm pitch
Seed layer: Cu foil 3 μm + electroless Cu 1 μm
This is a remover of palladium (Pd) catalyst residues left on the surface of the insulating resin in the SAP.
MEC REMOVER
PJ-9720
This hydrochloric acid-type Pd catalyst residue remover is particularly suitable for removing the Pd catalyst residues left on the surface of the insulating resin in the SAP.
Features of MEC REMOVER PJ-9720
- Can selectively remove Pd catalyst without damaging the conductor pattern.
- Greatly improves insulation reliability.
- Inhibits abnormal deposition of electroless Ni plating.
- Can be used for both dipping and spraying applications.
- Can be used at relatively low temperatures (25°C to 40°C).
- Automatic control and feeding is available.
Deposition of electroless nickel on the resin
Relationship between dwell time and detected Pd intensity (40°C spraying)
